voidless-hermetically sealed fast recovery glass rectifiers microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2008 6-11-2008 rev b www. microsemi . com scottsdale division 1n5415 thru 1n5420 1n5415 thru 1n5420 description appearance this ?fast recovery? rectifier diode series is military qualifie d to mil-prf-19500/411 and is ideal for high-reliability applications where a failure cannot be tolerated. these industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal ?category i? metallurgical bond. these devices are also available in surface mount melf package configurations by adding a ?us? suffix (see separate data sheet for 1n5415us thru 1n5420us). microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. ?e? package important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? popular jedec registered 1n5415 to 1n5420 series ? voidless hermetically sealed glass package ? triple-layer passivation ? internal ? category i? metallurgical bonds ? working peak reverse voltage 50 to 600 volts. ? jan, jantx, jantxv, and jans available per mil- prf-19500/411 ? surface mount equivalents also available in a square end-cap melf configuration with ?us? suffix (see separate data sheet for 1n5415us thru 1n5420us) ? fast recovery 3 amp rectifiers 50 to 600 v ? military and other high-reliability applications ? general rectifier applicat ions including bridges, half-bridges, catch diodes, etc. ? high forward surge current capability ? extremely robust construction ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? junction temperature: -65 o c to +175 o c ? storage temperature: -65 o c to +175 o c ? thermal resistance: 20 o c/w junction to lead at 3/8 inch (10 mm) lead length from body ? thermal impedance: 1.5 o c/w @ 10 ms heating time ? average rectified forward current (i o ): 3 amps @ t a = 55oc and 2 amps @ t a = 100oc (see note 1) ? forward surge current (8.3 ms half sine): 80 amps ? solder temperatures: 260 o c for 10 s (maximum) ? case: hermetically se aled voidless hard glass with tungsten slugs ? terminations: axial-leads are tin/lead (sn/pb) over copper except for jans with solid silver (ag) and no finish ? marking: body paint and part number, etc. ? polarity: cathode band ? tape & reel option: standard per eia-296 ? weight: 750 mg ? see package dimensions on last page electrical characteristics forward voltage v f @ 9 a maximum reverse current i r @ v rwm average rectified current i o (note 1) type v rwm minimum breakdown voltage v br @ 50 a volts min. volts max. volts 25 o c a 100 o c a maximum reverse recovery time t rr (note 2) ns 55 o c amps 100 o c amps 1n5415 1n5416 1n5417 1N5418 1n5419 1n5420 50v 100v 200v 400v 500v 600v 55v 110v 220v 440v 550v 660v 0.6 0.6 0.6 0.6 0.6 0.6 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 20 20 20 20 20 20 150 150 150 150 250 400 3.0 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 2.0 2.0 2.0 note 1: from 3.0 amps at t a = 55 o c, derate linearly at 22 ma/ o c to 2.0 amps at t a = 100 o c. above t a = 100 o c, derate linearly to zero at t a = 175 o c. these ambient ratings are for pc boards wh ere thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) does not exceed 175 o c. note 2: i f = 0.5a, i rm = 1a, i r(rec) = 0.250a
voidless-hermetically sealed fast recovery glass rectifiers www. microsemi . com scottsdale division 1n5415 thru 1n5420 1n5415 thru 1n5420 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum volt age the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be app lied over the operating temperature range excluding all transient voltages (ref jesd282-b). i o average rectified output current: t he output current averaged over a full cycle with a 50 hz or 60 hz sine- wave input and a 180 degree conduction angle. v f maximum forward voltage: the maximum forward vo ltage the device will exhibit at a specified current. i r maximum reverse current: the maximum reverse (leakage) current that will flow at the specified voltage and temperature. t rr reverse recovery time: the time interval betwe en the instant the current passes through zero when changing from the forward direction to the reverse di rection and a specified decay point after a peak reverse current occurs. graphs figure 1 ? typical reverse current vs. piv figure 2 ? typical forward current vs. forward voltage microsemi scottsdale division page 2 figure 3 ? maximum power vs. lead temperature figure 4 ? maximum current vs. lead temperature copyright ? 2008 6-11-2008 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
voidless-hermetically sealed fast recovery glass rectifiers www. microsemi . com scottsdale division 1n5415 thru 1n5420 1n5415 thru 1n5420 dimensions and schematic lead tolerance = + .002 -.003 in *includes sections of the lead or fillet over which the lead diameter is uncontrolled. microsemi scottsdale division page 3 copyright ? 2008 6-11-2008 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
|
